The Effects of Passive Probe Ground Leads
This article explains how the inductance of passive probe ground leads can dramatically reduce effective bandwidth, distort measurements, and introduce resonance and frequency-response errors.
Silicon and Wide-bandgap (GaN and SiC) power semiconductor devices and measurements, including double-pulse testing, switching loss, conduction loss, Rds ON, and a variety of other measurements to determine efficiency and efficacy of power semiconductor devices in circuit.
Wide-bandgap power devices demand high bandwidth and superior CMRR, making probe selection critical for accurate high-voltage upper-side measurements.
Power conversion relies on fast-switching MOSFETs and IGBTs that use low-voltage gate-drive signals to control high-voltage, high-current switching efficiently.